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Growth of tin nitride thin films by atmospheric pressure chemical vapor deposition using a halide source

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka, 432-8561, Japan

    N. Takahashi, K. Terada & T. Nakamura

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  1. N. Takahashi
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  2. K. Terada
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  3. T. Nakamura
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Correspondence to N. Takahashi.

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Takahashi, N., Terada, K. & Nakamura, T. Growth of tin nitride thin films by atmospheric pressure chemical vapor deposition using a halide source. Journal of Materials Science Letters 20, 227–228 (2001). https://doi.org/10.1023/A:1006742600345

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