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The dependence of the exciton transition and the Fermi energy on the InyGa1−yAs well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul, 139-701, South Korea

    T. W. Kim, M. Jung, D. U. Lee, H. J. Kim, Y. S. You & J. W. Cho

  2. Department of Physics, Kyung Hee University, Seoul, 130-701, South Korea

    K. H. Yoo

  3. Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, South Korea

    J. Y. Lee

  4. Photonics Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, South Korea

    M. D. Kim

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  1. T. W. Kim
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Kim, T.W., Jung, M., Lee, D.U. et al. The dependence of the exciton transition and the Fermi energy on the InyGa1−yAs well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells. Journal of Materials Science Letters 19, 755–757 (2000). https://doi.org/10.1023/A:1006735815624

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