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Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Electrophysics, Kwangwoon University, Seoul, 139-701, South Korea

    H. T. Yi & J. Cho

  2. Photonics Research Center, Korea Institute of Science and Technology, Seoul, 136-791, South Korea

    W. J. Choi, D. H. Woo, S. H. Kim & K. N. Kang

Authors
  1. H. T. Yi
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  2. J. Cho
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  3. W. J. Choi
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  4. D. H. Woo
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  5. S. H. Kim
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  6. K. N. Kang
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Yi, H.T., Cho, J., Choi, W.J. et al. Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers. Journal of Materials Science Letters 19, 835–836 (2000). https://doi.org/10.1023/A:1006716910637

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