Skip to main content
Log in

Polycrystalline thin film transistors fabricated by FALC (field aided lateral crystallization) technique

  • Published:
Journal of Materials Science Letters

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. E. Ohno, A. Yoshinouchi, T. Hosoda, M. Itoh, T. Morita and S. Tsuchimoto, Jpn. J. Appl. Phys. 33(1994) 635.

    Google Scholar 

  2. K. Ohno, T. Aoyama, N. Konishi and K. Miyata, IEEE Transactions on Electron Devices 39(1992) 792.

    Google Scholar 

  3. T. Noguchi, A. J. Tang, J. A. Tsai and R. Reif, ibid. 43(1996) 1454.

    Google Scholar 

  4. C. D. Kim and M. Matsumura, ibid. 43(1996) 576.

    Google Scholar 

  5. K. S. Song and D. K. Choi, in Proceedings of the 8th International Symposium on Silicon-on-Insulator Technology and Devices, Paris, September 1997, edited by S. Cristoloveanu (The Electrochemical Society, Pennington, 1997) p. 75.

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Song, KS., Lee, JB., Jun, SI. et al. Polycrystalline thin film transistors fabricated by FALC (field aided lateral crystallization) technique. Journal of Materials Science Letters 18, 1209–1211 (1999). https://doi.org/10.1023/A:1006698101609

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1006698101609

Keywords

Navigation