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The Characteristics of Interfacial Strains Developed in Silicon by Wet O2 Oxidation

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Ceramic Engineering, Yonsei University, 134 Shinchon, Sudaemun Ku, 120-749, Seoul, Korea

    D.-W. Shin, Y.-H. You & D.-J. Choi

  2. Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Chungryangri, Seoul, Korea

    G.-H. Kim

Authors
  1. D.-W. Shin
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  2. Y.-H. You
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  3. D.-J. Choi
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  4. G.-H. Kim
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Shin, DW., You, YH., Choi, DJ. et al. The Characteristics of Interfacial Strains Developed in Silicon by Wet O2 Oxidation. Journal of Materials Science Letters 18, 755–757 (1999). https://doi.org/10.1023/A:1006664429348

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