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Application of Free Carrier Absorption for Far-Infrared Detection

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Abstract

Far-infrared (FIR) free-carrier absorption characteristics for epitaxially grown p-type Si and GaAs thin films over a range of carrier concentrations have been investigated, both experimentally and theoretically, and employed to analyze the experimental results of FIR detection. The free-hole absorption is found to be almost independent of the wavelength and a linear regression relationship between the absorption coefficient and the carrier concentration has been obtained, which can be applied to well explain the behavior of GaAs FIR detectors with different number of layers, different applied biases, as well as different layer concentrations.

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Authors and Affiliations

  1. Department of Applied Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai, 200030, China

    W. Z. Shen

  2. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia, 30303, USA

    W. Z. Shen & A. G. U. Perera

  3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China

    W. Z. Shen

Authors
  1. W. Z. Shen
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  2. A. G. U. Perera
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Shen, W.Z., Perera, A.G.U. Application of Free Carrier Absorption for Far-Infrared Detection. International Journal of Infrared and Millimeter Waves 21, 1579–1587 (2000). https://doi.org/10.1023/A:1006655424471

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  • DOI: https://doi.org/10.1023/A:1006655424471

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