References
H. B. Dietrich, Proc. SPIE530 (1985) 30.
Mulpuri V. Rao, IEEE Trans. Electron Devices40 (1993) 1053 and references therein.
B. G. Streetman, “Solid state electronic devices”, 3rd edn (Englewood Cliffs, N.J., Prentice Hall International, 1991).
J. Vellanki, R. K. Nadella, M. V. Rao, O. W. Holland, D. S. Simons and P. H. Chi, J. Appl. Phys. 73 (1993) 1126.
A. Carnera, A. Gasparotto, M. Tromby, M. Caldironi, S. Pellegrino, F. Vidimari, C. Bocchi and C. Frigeri, ibid. 76 (1994) 5085.
C. Frigeri, C. Bocchi, A. Carnera, A. Gasparotto, N. Gamba-Corti and F. Longo, Mater. Res. Soc. Symp. Proc. 316 (1994) 191.
A. Knecht, M. Kuttler, H. Scheffler, T. Wolf and D. Bimberg, Nucl. Instrum. Methods Phys. Res. B80/81 (1993) 683.
L. A. Christel and J. F. Gibbons, J. Appl. Phys. 52 (1981) 5050.
B. Svensson, J. Linnros and G. Holman, Nucl. Instrum. Methods209/210 (1983) 755.
I. Golecki, G. E. Chapman, S. S. Lau, B. Y. Tsaur and J. W. Mayer, Phys. Lett. A71 (1979) 267.
J. S. Williams, R. G. Elliman, W. L. Brown and T. E. Seidel, Mater. Res. Soc. Symp. Proc. 35 (1985) 127.
A. Carnera, A. Gasparotto, A. Scordilli, F. Priolo, C. Frigeri, G. Rossetto, Nucl. Instrum. Methods Phys. Res. B96 (1995) 307.
Available from Dr. J. F. ZIEGLER, IBM Watson Research Center, Yorktown Heights, NY 10598, USA.
H. G. Robinson, M. D. Deal and D. A. Stevenson, Appl. Phys. Lett. 56 (1990) 554.
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Chini, T.K., Basu, D., Rout, B. et al. High-energy Ni Implantation in InP. Journal of Materials Science Letters 17, 1117–1119 (1998). https://doi.org/10.1023/A:1006640201699
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DOI: https://doi.org/10.1023/A:1006640201699