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Epitaxial Growth of Si by Low-energy DC-plasma Chemical Vapor Deposition

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Laboratorium für Festkörperphysik, ETH Hönggerberg, 8093, Zürich, Switzerland

    E. Mateeva, H. R. Deller, U. Kafader, C. Rosenblad & H. Von Känel

  2. Neu-Technikum Buchs, 9471, Buchs, Switzerland

    A. Dommann

Authors
  1. E. Mateeva
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  2. H. R. Deller
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  3. U. Kafader
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  4. C. Rosenblad
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  5. H. Von Känel
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  6. A. Dommann
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Mateeva, E., Deller, H.R., Kafader, U. et al. Epitaxial Growth of Si by Low-energy DC-plasma Chemical Vapor Deposition. Journal of Materials Science Letters 17, 1545–1547 (1998). https://doi.org/10.1023/A:1006562315076

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  • DOI: https://doi.org/10.1023/A:1006562315076

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