Abstract
An analytical model of silicon layer deposition on capillary (pore) walls is suggested for isothermal tetrachloride and hydride processes. The model enables one to assess the uniformity of the layer growth rate over the pore length and to calculate the healing time of capillary (pore) mouths.
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Prokop'ev, E.P., Timoshenkov, S.P. Chemical Vapor Deposition of Silicon Layers on Capillary and Pore Walls. Theoretical Foundations of Chemical Engineering 35, 76–80 (2001). https://doi.org/10.1023/A:1005276920580
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DOI: https://doi.org/10.1023/A:1005276920580