Abstract
Electrochemical treatment of crystalline GaAs in 1 M HCl results in the formationof porous GaAs. As a by-product of the electrochemical dissolution process,small transparent crystals may grow on the porous GaAs skeleton under certainchemical conditions. These surface crystalline deposits have been investigatedby Raman scattering spectroscopy. From surface chemical analysis and byreference to the Raman spectra of appropriate chemical compounds, it was determinedthat the crystallites comprise As2O3 and Ga2O3.Their Raman spectra and that of As2O5 · xH2Oare presented here for the first time in detail.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
D. J. Lockwood, Light Emission in Silicon (Academic Press, San Diego, 1997).
P. Schmuki, J. W. Fraser, C. M. Vitus, M. J. Graham, and H. S. Isaacs, J. Electrochem. Soc. 143, 3316 (1996).
P. Schmuki, D. J. Lockwood, J. W. Fraser, M. J. Graham, and H. S. Isaacs, Proc. Mater. Res. Soc. Symp. 431, 439 (1996).
P. Schmuki, D. J. Lockwood, H. J. Labbé, and J.W. Fraser, Appl. Phys. Lett. 69, 1620 (1996).
D. J. Lockwood, M. W. C. Dharma-wardana, J.-M. Baribeau, and D. C. Houghton, Phys. Rev. B 35, 2243 (1987).
R. W. G. Wyckoff, Crystal Structures, 2nd edn., Vol. 2 (Wiley, New York, 1964), pp. 6-20.
D. M. Adams, Coordination Chem. Rev. 10, 183 (1973).
S. Adachi, ed. Properties of Aluminium Gallium Arsenide (INSPEC, London, 1993), p. 30.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lockwood, D.J. Raman Spectroscopy of Oxides of GaAs Formed in Solution. Journal of Solution Chemistry 29, 1039–1046 (2000). https://doi.org/10.1023/A:1005199104055
Issue Date:
DOI: https://doi.org/10.1023/A:1005199104055