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Formation of the HNbO3 Phase by High-Temperature Annealing of LiNbO3 Substrates

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  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk

    L. D. Pokrovskii

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  1. L. D. Pokrovskii
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Pokrovskii, L.D. Formation of the HNbO3 Phase by High-Temperature Annealing of LiNbO3 Substrates. Journal of Structural Chemistry 41, 890–894 (2000). https://doi.org/10.1023/A:1004886924776

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