Abstract
Ferroelectric and leakage current characteristics of the MOD-derived SrBi2xTa2O9 (0.8 ≤ x ≤ 1.6) and SrBi2.4(Ta1-yNby)2 O9 (0 ≤ y ≤ 1) thin films were investigated. The SBT and SBTN films were fully crystallized to Bi-layered perovskite structure by annealing at 800°C for 1 hour in oxygen atmosphere. The ferroelectric characteristics of the SBT films were optimized at the Bi/Ta mole ratio x of 1.2. The leakage current density of the Bi-excess SBT films decreased remarkably by the post-metallization annealing at 800°C for 10 minutes in oxygen ambient. The ferroelectric characteristics of the SBTN films were optimized with the SBN content y of 0.25. The SrBi2.4(Ta0.75Nb0.25)2 O9 film exhibited 2Pr and Ec of 19.04 μC/cm2 and 24.94 kV/cm at ±5 V, which were superior to 2Pr of 11.3 μC/cm2 and Ec of 39.6 kV/cm obtained for the SrBi2.4Ta2O9 film after the post-metallization annealing. The MOD-derived SrBi2.4(Ta0.75Nb0.25)2O9 film did not exhibit the polarization fatigue after 1011 switching cycles at ±5 V.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. F. Scott and C. A. Araujo, Science 246 (1989) 1400.
C. A. Araujo, J. D. Cuchiaro, L. D. Mcmillan, M. C. Scott and J. F. Scott, Nature 374 (1995) 627.
D. J. Yeon, J. D. Park and T. S. Oh, J. Kor. Phys. Soc. 30 (1998) S173.
C. V. R. VASCANT Kumar, R. Pascual and M. Sayer, J. Appl. Phys. 71 (1992) 864.
S. B. Desu and D. P. Vijay,Mater. Sci. Eng. B32 (1995) 75.
T. Mihara, H. Watanabe and C. A. Araujo, Jpn J. Appl. Phys. 33 (1994) 3996.
H. Watanabe, T. Mihara, H. Yoshimori and C. A. Araujo, ibid. 34 (1995) 5240.
S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen and Y. N. Wang, Phys. Rev. B54 (1996) 337.
H. Tabata, H. Tabaka and T. Kawai,Jpn. J. Appl. Phys. 34 (1995) 5146.
X. Zhang, P. Gu and S. B. Desu, Mat. Res. Soc. Symp. Proc. 493 (1998) 215.
J. Zhu, X. Zhang, Y. Zhu and S. B. Desu, J. Appl. Phys. 83 (1998) 1610.
S. D. Desu, P. C. Joshi, X. Zhang and S. O. Ryu, ibid. 71 (1997) 1041.
W. Perez, E. Chiang-Parado, A. Reynes-Figueroa, R. S. Katiyar, D. Ravichandran and A. S. Bhalla, Mat. Res. Soc. Symp. Proc. 493 (1998) 237.
T. Chen, T. Li, X. Zhang and S. B. Desu,J. Mater. Res. 12 (1997) 1569.
I. Koiwa, K. Tani, J. Mita and T. Iwabuchi, Jpn. J. Appl. Phys. 37 (1998) 192.
I. Koiwa, Y. Okada, J. Mita, A. Hashimoto and Y. Sawada, ibid. 36 (1997) 5904.
S. Y. Chen, X. F. Chen and I. W. Chen, Mat. Res. Soc. Symp. Proc. 361 (1994) 15.
J. S. Lee, H. H. Kim, H. J. Kwon and Y. W. Jwong, Appl. Phys. Lett. 73 (1998) 166.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Yeon, D.J., Park, J.D., Kwon, Y. et al. Electrical characteristics of the MOD-derived SrBi2xTa2O9 and SrBi2.4(Ta,Nb)2O9 thin films. Journal of Materials Science 35, 2405–2411 (2000). https://doi.org/10.1023/A:1004792929465
Issue Date:
DOI: https://doi.org/10.1023/A:1004792929465