Abstract
CuInSe2 thin films, prepared using the Chemical Bath Deposition (CBD) technique, were analysed using Thermally Stimulated Current (TSC) measurements in order to get a clear picture of the different trap levels present in it. As-prepared samples showed two trap levels: the prominent one was due to the presence of a Se vacancy, while the weak one was due to the presence of a Cu vacancy. After annealing in air, the Se vacancy disappeared and a new level appeared which is suspected to be due to adsorbed oxygen. But annealing in air does not affect the Cu vacancy. On the other hand, annealing in vacuum does not affect Se vacancy, but the presence of an Fe impurity was detected in this case. A possible explanation for this phenomenon is also discussed. The dark conductivity measurements were also conducted on as-prepared as well as annealed CuInSe2 samples. These results are found to be in good agreement with the results obtained from TSC measurements.
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References
Lawrence L. Kazmerski, “Current Topics in Photovoltaics” (Academic Press, New York, 1985) p. 43.
Kenneth Zweibel, Harin S. Ullal and Bolko G. Von Roedem, in Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington, DC, 1996, p. 159.
R. H. Bube, “Photoconductivity of Solids” (Wiley, New York, 1960) p. 292.
A. G. Milnes, “Deep Impurities in Semiconductors” (Wiley, New York, 1973) p. 226.
S. G. Elkomos, M. Samimi, M. Hage-Ali and P. Siffert, J. Appl. Phys. 57 (1985) 5313.
T. Datta, R. Noufi and S. K. Deb, ibid. 59 (1986) 1548.
N. F. Mott and R. W. Gurney, “Electronic Processes in Ionic Crystals,” 2nd ed. (Oxford University, NewYork, 1940) p. 108.
P. K. Vidyadharan Pillai, K. P. Vijayakumar and P. S. Mukherjee, J. Mat. Sci. Lett. 13 (1994) 1725.
P. K. Vidyadharan Pillai and K. P. Vijayakumar, Solar Cells and Solar Energy Materials, accepted.
Masayuki Tanda, Susuma Manaka, Jorge R. Encians Martin, Katsumi Kushiya, Hideki Sano, Akira Yamada, Makoto Konagai and Kiyoshi Takahashi. Jpn. J. Appl. Phys. 31 (1992) L 753.
P. Lange, H. Neff, M. Fearheiley and K. J. Bachmann, Physical Review B 31 (1985) 4074.
C. Rincon, J. Gonzalez and G. Sanchez Perez, J. Appl. Phys. 54 (1983) 6634.
P. Migliorato, J. L. Shay, H. M. Kasper and Sigurd Wagner, ibid. 46 (1975) 1777.
Phil Won Yu, ibid. 47 (1976) 677.
B. Tell, J. L. Shay and H. M. Kasper, ibid. 43 (1972) 2469.
H. Sobotta, H. Neumann, V. Riede, G. Kuhn, J. Seltmann and D. Oppermann,Phys. Stat. Sol. A 60 (1980) 531.
H. Neumann, N. V. Nam, H. J. Hobler and G. Kuhn, Solid State Commun. 25 (1978) 899.
S. M. Wasim, Solar Cells 16 (1986) 289.
B. Schumann, C. Georgi, A. Tempel, G. Kuhn, Nguyen Van Nam, H. Neumann and W. Horig, Thin Solid Films 52 (1978) 45.
H. Neumann, E. Nowak and G. Kuhn,Cryst. Res. Technol. 16 (1981) 1369.
H. J. Von Bardeleben and R. D. Tomlinson, J. Phys. C 13 (1980) L 1097.
J. M. Tchapkui-Niat, A. Goltzene and C. Schwab, ibid. 15 (1982) 4671.
D. Sridevi and K. V. Reddy,Ind. J. Pure & Appl. Phys. 24 (1986) 392.
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Zeenath, N.A., Pillai, P.K.V., Bindu, K. et al. Study of trap levels by electrical techniques in p-type CuInSe2 thin films prepared using chemical bath deposition. Journal of Materials Science 35, 2619–2624 (2000). https://doi.org/10.1023/A:1004783517595
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DOI: https://doi.org/10.1023/A:1004783517595