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Effects of thickness and composition on the resistivity of Cu-MgF2 cermet thin film resistors

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Abstract

Cermet composite thin film resistors of Cu and MgF2 were prepared by conventional vacuum evaporation technique at a pressure of 5 × 10−5 torr and at 302 ± 2 K. The composition by volume was varied from 10 vol% Cu and 90 vol% MgF2 to 100% Cu for thicknesses in the range 110 to 300 nm. Starting materials were co-evaporated from separate molybdenum boats. An empirical formula has been proposed to describe the resistivity-thickness relation for the thin film resistors. The resistivity-thickness relation was found to be of Arrhenius type with ln ρf being a linear function of inverse of film thickness in the entire thickness range investigated. A parameter S has been defined to be an estimate of the average separation of the metal islands in the composite thin films. It was observed that S increased with decrease in Cu content of the composite resistors. Another empirical formula has been proposed to describe the resistivity-composition relation for the same film resistors. The relation, obtained by regression analysis of the resistivity-composition data, was found to be exponential in terms of vol% Cu content of the Cu-MgF2 cermets.

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Authors and Affiliations

  1. Physics Department, University of Zimbabwe, PO Box MP 167, Mt. Pleasant, Harare, Zimbabwe

    G. Katumba

  2. Physics Department, University of Zimbabwe, PO Box MP 167, Mt. Pleasant, Harare, Zimbabwe

    L. Olumekor

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  1. G. Katumba
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  2. L. Olumekor
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Katumba, G., Olumekor, L. Effects of thickness and composition on the resistivity of Cu-MgF2 cermet thin film resistors. Journal of Materials Science 35, 2557–2559 (2000). https://doi.org/10.1023/A:1004754710326

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