Aluminium Single Electron Transistors with Islands Isolated from the Substrate


The low-frequency noise figures of single-electron transistors(electrometers) of traditional planar and new stacked geometrywere compared. We observed a correlation between the chargenoise and the contact area of the transistor island with adielectric substrate in the set of Al transistors located onthe same chip and having almost similar electric parameters.We have found that the smaller the contact area the lower thenoise level of the transistor. The lowest noise value (δQx=(8±210 6e/\(\sqrt {Hz}\) at 10Hz)has been measured in a stacked transistor with an island which wascompletely isolated from a substrate. Our measurements haveunambiguously indicated that the dominant source of thebackground charge fluctuations is associated with a dielectricsubstrate.

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  1. 1.

    G. Zimmerli, T. M. Eiles, R. L. Kautz, and J. M. Martinis, Appl. Phys. Lett. 61, 237 (1992).

    Google Scholar 

  2. 2.

    S. M. Verbrugh, Ph.D. thesis, Delft University of Technology, 1995; S. M. Verbrugh, M. L. Benhamadi, E. H. Visscher, and J. E. Mooij, J. Appl. Phys. 78, 2830 (1995).

  3. 3.

    A. B. Zorin, F.-J. Ahlers, J. Niemeyer, T. Weimann, H. Wolf, V. A. Krupenin, and S. V. Lotkhov, Phys. Rev. B 53, 13682 (1996).

    Google Scholar 

  4. 4.

    A. N. Korotkov, D. V. Averin, K. K. Likharev, and S. A. Vasenko, in Single Electron Tunneling and Mesoscopic Devices, edited by H. Koch and H. Lübbig, p. 45 (Springer-Verlag, Berlin, 1992).

    Google Scholar 

  5. 5.

    M. W. Keller, J. M. Martinis, A. H. Steinbach, and N. M. Zimmerman, IEEE Trans. on lnstrum. and Meas. 46, 307 (1997).

    Google Scholar 

  6. 6.

    V. A. Krupenin, S. V. Lotkhov, D. E. Presnov, A. B. Zorin, F.-J. Ahlers, J. Niemeyer, H. Scherer, T. Weimann, and H. Wolf, Czech. J. Phys. 46, suppl. 4, 2283 (1996).

    Google Scholar 

  7. 7.

    K. K. Likharev, Proceedings of the IEEE, 87, No. 4, 606-632 (1999).

    Google Scholar 

  8. 8.

    V. A. Krupenin, D. E. Presnov, M. N. Savvateev, H. Scherer, A. B. Zorin, and J. Niemeyer, J. Appl. Phys. 48, 3212 (1998).

    Google Scholar 

  9. 9.

    J. Niemeyer, PTB Mitt. 84, 251 (1974); G. J. Dolan, Appl. Phys. Lett. 31, 337 (1977).

    Google Scholar 

  10. 10.

    V. A. Krupenin, D. E. Presnov, A. B. Zorin, and J. Niemeyer, in 22nd International Conference on Low Temperature Physics (Helsinki, Finland, 1999); to be published in Physica B;

    Google Scholar 

  11. 11.

    B. Starmark, P. Delsing, D. B. Haviland, and T. Claeson, in 6th International Superconductive Electronics Conference, edited by H. Koch and S. Knappe, Vol. 2, p. 391 (Berlin, Germany, 1997).

    Google Scholar 

  12. 12.

    B. Starmark, T. Henning, T. Claeson, P. Delsing, and A. N. Korotkov, LANL e-Print Archive. [Online.] Available WWW: http:/ /, condmat/9806354, June 1998.

  13. 13.

    A. N. Korotkov, Phys. Rev. B 49, 10381 (1994).

    Google Scholar 

  14. 14.

    E. H. Visscher, S. M. Verbrugh, J. Lindermann, P. Hadley and J. E. Mooij, Appl. Phys. Lett. 66, 305 (1995).

    Google Scholar 

  15. 15.

    R. J. Schoelkopf, P. Walgren, A. A. Kozhevnikov, P. Delsing, and D. E. Prober, Science 280, 1238 (1998).

    Google Scholar 

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Krupenin, V.A., Presnov, D.E., Zorin, A.B. et al. Aluminium Single Electron Transistors with Islands Isolated from the Substrate. Journal of Low Temperature Physics 118, 287–296 (2000).

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  • Aluminium
  • Contact Area
  • Magnetic Material
  • Lower Noise
  • Single Electron