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Effect of BaO and SiO2 addition on PTCR BaTiO3 ceramics

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Abstract

The influence of Ba-excess and liquid phase sintering with SiO2 on the electrical conduction and microstructure in PTCR BaTiO3 has been investigated. Dense (95–96%), small grain (5–10 μm) PTCR materials were obtained in Ba-excess (Ba/Ti = 1.006) BaTiO3. The materials exhibit low room temperature resistivity ρRT (100–102 Ω·cm) and high PTCR respond (more than 5 orders). Solid state sintering was found to inhabit the semiconducting and PTCR behavior in Ba-excess materials. Liquid phase sintering, using SiO2 in the Ba-excess BaTiO3, resulted in low ρRT and significant PTCR response. Through domain observation, interior “Polaron deficient zones” were found in samples which exhibit limited liquid phase sintering, leading to non-uniform directional domains and low charge carrier mobility. Proper control of the SiO2 concentration was found critical for obtaining uniform directional domain microstructures and low ρRT.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Cincinnati, Cincinnati, OH, 45221-0012, USA

    Gaosheng Liu & R. D. Roseman

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  1. Gaosheng Liu
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  2. R. D. Roseman
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Liu, G., Roseman, R.D. Effect of BaO and SiO2 addition on PTCR BaTiO3 ceramics. Journal of Materials Science 34, 4439–4445 (1999). https://doi.org/10.1023/A:1004624918910

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  • DOI: https://doi.org/10.1023/A:1004624918910

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