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On the possibility of β-C3N4 carbon nitride synthesis via C and N implantation into copper

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Abstract

The effects of high dose carbon and nitrogen implantations into copper on the type of chemical bonds and stoichiometry of the formed C–N phases are described. The results are compared with those obtained after nitrogen implantation into diamond like carbon (DLC) layers. The striking difference between the two experiments is the stoichiometry of covalently bonded C–N phase which corresponds to C2N or to C3N3.7 for N implantation into DLC and C and N implantation into copper, respectively.

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Authors and Affiliations

  1. Institute of Electronic Materials Technology, Wólczyñska 133, 01-919, Warsaw, Poland

    J. Jagielski

  2. Institut de Physique Nucléaire IN2P3-CNRS, Université Claude Bernard, Lyon I, 43, bd du 11 Novembre 1918, 69622, Villeurbanne Cedex, France

    N. Moncoffre

  3. Institut de Recherche sur la Catalyse, CNRS, 2 Avenue Albert Einstein, 69626, Villeurbanne Cedex, France

    P. Delichère

  4. Institut de Physique Nucléaire IN2P3-CNRS, Université Claude Bernard, Lyon I, 43, bd du 11 Novembre 1918, 69622, Villeurbanne Cedex, France

    G. Marest

Authors
  1. J. Jagielski
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  2. N. Moncoffre
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  3. P. Delichère
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  4. G. Marest
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Jagielski, J., Moncoffre, N., Delichère, P. et al. On the possibility of β-C3N4 carbon nitride synthesis via C and N implantation into copper. Journal of Materials Science 34, 2949–2954 (1999). https://doi.org/10.1023/A:1004608107268

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  • DOI: https://doi.org/10.1023/A:1004608107268

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