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Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

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Abstract

With the method of phenomenology, a supersaturation–condensation–fusion (SCF) mechanism is proposed to describe the growth of chemical vapor deposition silicon carbide under normal atmosphere. The structure has been characterized by scanning electron microscopy and transmission electron microscopy. Morphology characterization of deposited crystallites and silicon carbide aggregates have been explained in terms of SCF mechanism; Raman spectra analysis indicated that the major chemical bonds of deposit were Si–C and –C=C–. Auger spectra analysis revealed that there were Si, C, S, Cl, and O on the surface of the deposit.

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Authors
  1. Y. Xu
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  2. L. Cheng
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  3. L. Zhang
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  4. W. Zhou
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Xu, Y., Cheng, L., Zhang, L. et al. Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere. Journal of Materials Science 34, 551–555 (1999). https://doi.org/10.1023/A:1004546712932

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  • DOI: https://doi.org/10.1023/A:1004546712932

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