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Material properties of CuInSe2 prepared by H2Se treatment of CuIn alloys

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Abstract

CuInSe2 thin films were prepared by the selenization of metallic precursors in an atmosphere containing H2Se gas. Device-quality (homogeneous and dense films with excellent compositional uniformity) CuInSe2 films were obtained when Cu/In/Cu structures were exposed to H2Se/Ar while the temperature was ramped between 150 and 400°C. Auger studies indicated that the composition of the films was relatively uniform through their thickness. Transmission electron microscopy studies indicated that copper-rich samples exhibited large facetted grains (1–4 μm) with relatively low defect density. Indium-rich films were characterized by relatively small grains (0.2–0.8 μm), which were highly defected. CuInSe2/CdS/ZnO solar cells were fabricated using chemically etched (in KCN) copper-rich CuInSe2 absorber films, and conversion efficiencies of 5% were obtained without the use of an antireflection coating. © 1998 Kluwer Academic Publishers

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Authors and Affiliations

  1. Department of Physics, Rand Afrikaans University, PO Box 524, Auckland Park, 2006, South Africa

    V Alberts & R Swanepoel

  2. Electron Microscope Unit, University of the Witwatersrand, Bag 3, WITS, 2050, South Africa

    M. J Witcomb

Authors
  1. V Alberts
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  2. R Swanepoel
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  3. M. J Witcomb
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Alberts, V., Swanepoel, R. & Witcomb, M.J. Material properties of CuInSe2 prepared by H2Se treatment of CuIn alloys. Journal of Materials Science 33, 2919–2925 (1998). https://doi.org/10.1023/A:1004394328008

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