Abstract
Interfacial reactions of Pd and Pd/Si films on [0 0 1]-oriented GaAs substrates have been studied by X-ray photoelectron spectroscopy. In the as-deposited Pd/GaAs system, Pd interacts with Ga and the As is isolated. A Pd–Ga–As compound is observed to form under the Pd–Ga and As layers. Annealing the Pd/GaAs system at 450°C leads to the formation of islands composed of Pd–Ga and Pd–As, amongst which a Pd–Ga–As compound forms. In the Pd/Si/GaAs system, Pd diffuses in to the GaAs substrate, the Pd–Ga and Pd–Ga–As compounds are formed. In the 450°C-annealed Pd/Si/GaAs system, little interfacial reaction at the GaAs substrate occurs. Possible interfacial reactions in the Pd/GaAs and Pd/Si/GaAs systems, including the previously investigated Pt/GaAs, Pt/Si/GaAs, Ni/GaAs and Ni/Si/GaAs systems are considered by calculation of the change in enthalpy of the reactions. The thermodynamic analyses agree with the experimental results.
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References
H. Iwakuro and T. Kuroda, Jpn. J. Appl. Phys. 28 (1989) 223.
T. Kuroda and H. Iwakuro, J. Appl. Phys. 66 (1989) 1486.
H. Iwakuro and T. Kuroda, Jpn. J. Appl. Phys. 29 (1990) 381.
J. O. Olowolafe, P. S. Ho, H. J. Hovel, J. E. Lewis and J. M. Woodall, J. Appl. Phys. 50 (1979) 955.
X. F. Zeng and D. D. L. Chung, J. Vac. Sci.Technol. 21 (1982) 611.
T. Sands, V. G. Keramidas, R. Gronsky and J. Washburn, Thin Solid Films 136 (1986) 105.
Y. C. Zhao and Z. Q. Wu, Appl. Phys.Lett. 58 (1991) 349.
C. D. Wagner, W. M. Riggs, L. E. Davis and J. F. Moulder, “Handbook of X-ray photoelectron spectroscopy”, (Perkin-Elmer, Eden Prairie, MN, 1979).
R. Pretorius, J. M. Harris and M.-A. Nicolet, Solid State Electron. 21 (1978) 667.
O. Kubaschewski and C. B. Alcock, “Metallugical thermo-chemistry”, 5th Edn, (Pergamon, Oxford, 1979).
A. R. Miedema, J. Less-Common Metals 46 (1976) 67.
T. E. Shim, T. Itoh, Y. Yamamoto and S. Suzuki, Appl. Phys Lett. 48 (1986) 641.
S. K. Sinha and J. M. Poate, in “Thin films-interdiffusion and reactions”, edited by J. M. Poate, K. N. Tu and J. W. Mayer (Interscience Wiley, New York, 1978).
A. Lahav, M. Eizenberg and Y. Komem, J. Appl. Phys. 60 (1986) 991.
M. Ogawa, Thin Solid Films 70 (1980) 181.
T. S. Kuan, J. L. Freeouf, R. F. Batson and E. L. Wilkie, J. Appl. Phys. 58 (1985) 1519.
K. N. Tu and J. W. Mayer, in “Thin films-interdiffusion and reactions”, edited by J. M. Poate, K. N. Tu and J. W. Mayer (Interscience Wiley, New York, 1978).
S. Danyluk and G. E. McGuire, J. Appl. Phys. 45 (1974) 5141.
P. J. Grunthaner, F. G. Grunthaner and A. Madhukar, J. Vac. Sci.Technol. 20 (1982) 680.
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Iwakuro, H., Kuroda, T., Shen, D.H. et al. Interactions of thin films of Pd and Pd/Si on GaAs: an X-ray photoelectron spectroscopic study combined with a thermodynamic analysis. Journal of Materials Science 33, 379–384 (1998). https://doi.org/10.1023/A:1004371813683
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DOI: https://doi.org/10.1023/A:1004371813683