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The Spectrum of Deep Levels in the InP Schottky Barrier

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Journal of Applied Spectroscopy Aims and scope

Abstract

The energy spectrum of deep levels in the space-charge region of the Schottky barrier of InP field-effect transistors is determined by the method of tunneling spectroscopy. It has been established that for the most part the space-charge region of the Schottky barrier has electron traps with large capture cross sections that control the tunneling current in the Schottky barrier.

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Authors and Affiliations

  1. Institute of Electronics, National Academy of Sciences of Belarus, 22 Logoiskii Trakt, Minsk, 220090, Belarus

    I. A. Bocharova & S. A. Malyshev

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  1. I. A. Bocharova
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  2. S. A. Malyshev
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Bocharova, I.A., Malyshev, S.A. The Spectrum of Deep Levels in the InP Schottky Barrier. Journal of Applied Spectroscopy 67, 1054–1057 (2000). https://doi.org/10.1023/A:1004192926091

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  • DOI: https://doi.org/10.1023/A:1004192926091

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