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Properties of the GaAs–Si Interface in Epitaxy through an Aluminum Layer

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Abstract

The interaction of elements near the interface during epitaxial growth of monocrystalline GaAs films through an aluminum layer is investigated by the methods of x-ray photoelectronic spectroscopy and secondary-ion mass spectroscopy.

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Authors and Affiliations

  1. Institute of Electronics, National Academy of Sciences of Belarus, 22 Logoiskii Trakt, Minsk, 220090, Belarus

    F. M. Katsapov, L. V. Lakoza & E. A. Tyavlovskaya

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  1. F. M. Katsapov
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  2. L. V. Lakoza
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  3. E. A. Tyavlovskaya
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Katsapov, F.M., Lakoza, L.V. & Tyavlovskaya, E.A. Properties of the GaAs–Si Interface in Epitaxy through an Aluminum Layer. Journal of Applied Spectroscopy 67, 1050–1053 (2000). https://doi.org/10.1023/A:1004140909253

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  • DOI: https://doi.org/10.1023/A:1004140909253

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