Abstract
The vibrational absorption bands associated with some types of double thermal donors (TD) in Ge enriched with the oxygen isotopes 16O and 18O have been identified. The thermal donors were formed during heat treatment of Ge:O crystals at 300 and 350°C. Absorption spectra were measured at room temperature and at 10 K. The formation of the thermal donors was accompanied by the appearance of three absorption bands, which in the Ge:16O spectra at room temperature are located at 600, 740, and 780 cm−1. In low-temperature measurements, the bands at 600 and 780 cm−1 exhibited splitting into series of narrow lines (up to 9) associated with some types of thermal donors (TD1–TD9). The absorption spectra measured at 10 K after different cooling conditions display bistability of the first four types of thermal donors (TD1–TD4). In the samples cooled by illumination with light in the region of frequencies of the fundamental absorption of Ge, pairs of lines are observed that belong to the bistable thermal donors in the helium-like configuration of double donors (DD). After cooling the samples in the dark, these pairs of lines are replaced by three new bands, which belong to local vibrational modes of bistable thermal donors in the low-energy neutral configuration. Based on the isotopic shift of the local vibrational modes of the thermal donors in Ge:16O and Ge:18O, a rigorous proof of the oxygen atoms entering into the composition of thermal donors is obtained.
Similar content being viewed by others
REFERENCES
W. Goetz, G. Pensl, and W. Zulehner, Phys. Rev., B46, 4312–4315 (1992).
F. Shimura (ed.), Semiconductors and Semimetals: Oxygen in Silicon, 42, London (1994).
R. Jones (ed.), Proc. NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon, Exeter, U.K., 1996, NATO ASI, Ser. 3: High Technology, 17, Kluwer Academic, Dordrecht (1996).
T. Hallberg and J. L. Lindstrom, J. Appl. Phys., 79, 7550–7581 (1996).
J. L. Lindstrom and T. Hallberg, in: R. Jones (ed.), Proc. NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon, Exeter, U.K., 1996, NATO ASI, Ser. 3: High Technology, 17, Kluwer Academic, Dordrecht (1996), pp. 41–60.
V. D. Tkachev, L. F. Makarenko, V. P. Markevich, and L. I. Murin, Fiz. Tekh. Poluprovodn., 18, 526–531 (1984).
Ya. I. Latushko, L. F. Makarenko, V. P. Markevich, and L. I. Murin, Phys. Status Solidi, A93, K181–K184 (1988).
V. V. Litvinov, G. V. Pal'chik, and V. I. Urenev, Fiz. Tekh. Poluprovodn., 19, No. 8, 1366–1370 (1985).
V. V. Litvinov, G. V. Palchik, and V. I. Urenev, Phys. Status Solidi, A108, 311–321 (1988).
P. Clauws, F. Callens, F. Maes, J. Vennik, and E. Boesman, Phys. Rev., B44, 3665–3672 (1991).
T. Hallberg and J. L. Lindstrom, Appl. Phys. Lett., 68, 3458–3460 (1996).
W. Kaiser, J. Phys. Chem. Sol., 23, 255–260 (1962).
P. Clauws, Mater. Sci. Eng., B36, 213–220 (1996).
N. Fukuoka, K. Atobe, M. Honda, and K. Matsuda, Jpn. J. Appl. Phys., 30, 784–787 (1991).
E. J. Millett, L. S. Wood, and G. Bew, Brit. J. Appl. Phys., 16, 1593–1594 (1965).
E. Artacho, F. Yndurain, B. Pajot, R. Ramirez, C. P. Nerrero, L. I. Khirunenko, K. Itoh, and E. E. Haller, Phys. Rev., B56, 3820–3833 (1997).
V. V. Litvinov, V. A. Bykovski, and N. I. Dolgikh, in: M. Scheffler and R. Zimmermann (eds.), Proc. 23rd Int. Conf. on Physics of Semiconductors, Berlin, Germany, July 1996, 4, World Scientific, Singapore (1996), pp. 2609–2612.
P. Deak, L. C. Snyder, and J. W. Corbett, Phys. Rev., B45, 11612–11626 (1992).
D. J. Chadi, Phys. Rev. Lett., 77, 861–864 (1996).
P. Deak, in: R. Jones (ed.), Proc. NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon, Exeter, U.K., 1996, NATO ASI, Ser. 3: High Technology, 17, Kluwer Academic, Dordrecht (1996), pp. 163–177.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Litvinov, V.V., Klechko, A.A., Lindstrom, J.L. et al. Local Vibrations of Oxygen-Containing Thermal Donors in Germanium. Journal of Applied Spectroscopy 67, 904–909 (2000). https://doi.org/10.1023/A:1004132320754
Issue Date:
DOI: https://doi.org/10.1023/A:1004132320754