Abstract
We revealed and investigated the increase in the quantum yield of sensitized phosphorescence of naphthalene in a frozen solution of n-hexane as a result of annealing of a specimen near the melting point of a solvent. We show that the reason for the rise in the quantum yield is the increase in the number of acceptor molecules that participate in radiation due to the removal of static quenching.
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Deryabin, M.I., Kulikova, O.I. & Solodunov, V.V. Influence of Annealing on the Quantum Yield of Sensitized Phosphorescence of Naphthalene in Frozen Solutions of n-Hexane. Journal of Applied Spectroscopy 67, 1011–1015 (2000). https://doi.org/10.1023/A:1004128606527
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DOI: https://doi.org/10.1023/A:1004128606527