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Determination of Trace Impurities of H2, O2, Ar, N2, CO, CO2, and Hydrocarbons in High-Purity Monosilane by Gas Chromatography

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Abstract

Procedures were proposed for the determination of impurities of permanent gases (H2, O2, Ar, N2, and CO), carbon dioxide, and hydrocarbons in high-purity monosilane by gas chromatography with detection limits of 1–3 ppm, 2 ppm, and 0.02–0.04 ppm, respectively, which are lower by 1–2 orders of magnitude than those published in the literature. The procedures make it possible to check the compliance of the purity of monosilane with present standards of microelectronics (TU 48-0513-057.0-91).

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Authors and Affiliations

  1. Nizhni Novgorod State Technical University, ul. Minina 24, Nizhni Novgorod, 603600, Russia

    V. M. Vorotyntsev, G. M. Mochalov & I. V. Vorotyntsev

  2. OOO Firma Khorst, ul. Akademika Yangelya 14-2-257, Moscow, 113534, Russia

    A. K. Matveev & A. V. Malyshev

Authors
  1. V. M. Vorotyntsev
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  2. G. M. Mochalov
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  3. A. K. Matveev
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  4. A. V. Malyshev
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  5. I. V. Vorotyntsev
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Vorotyntsev, V.M., Mochalov, G.M., Matveev, A.K. et al. Determination of Trace Impurities of H2, O2, Ar, N2, CO, CO2, and Hydrocarbons in High-Purity Monosilane by Gas Chromatography. Journal of Analytical Chemistry 58, 156–159 (2003). https://doi.org/10.1023/A:1022310222267

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  • DOI: https://doi.org/10.1023/A:1022310222267

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