Abstract
The flame emission in the region 400–600 nm during monosilane and dichlorosilane oxidation (initial pressures of 3–20 torr; T = 300 K) is caused by radical luminescence processes on the surface of aerosol microparticles of the SiO2 formed. The generation of energy by the interaction of gas-phase species with the SiO2 surface at the initial stages of the phase formation depends on the presence of the intrinsic structural defects Si+ and defects like Si+ implanted into SiO2. The addition of SF6 to the starting mixture results in the appearance of emission bands due to the Si+ defects in the radical luminescence spectrum.
Similar content being viewed by others
REFERENCES
Chapple-Sokol, J.D. and Gordon, R.F., Thin Solid Films, 1989, vol. 171, p. 291.
Khairutdinov, R.F., Usp. Khim., 1998, vol. 67, no. 2, p. 125.
Shantarovich, P.S., Acta Physicochem. URSS, 1935, vol. 2, p. 633.
Emeleus, H.J. and Stewart, K., J. Chem. Phys., 1935, vol. 2, no. 1, p. 1182.
Azatyan, V.V., Usp. Khim., 1985, vol. 54, no. 1, p. 33.
Azatyan, V.V., Kalkanov, V.A., and Shavard, A.A., React. Kinet. Catal. Lett., 1980, vol. 15, no. 3, p. 367.
Azatyan, V.V., Aivazyan, R.G., Kalkanov, V.A., and Shavard, A.A., Kinet. Katal., 1985, vol. 26, no. 6, p. 1287.
Van de Weijer, P. and Zwerver, B.H., Chem. Phys. Lett., 1988, vol. 153, no. 1, p. 33.
Braun, V.R., Krasnoperov, A.N., and Panfilov, V.N., Dokl. Akad. Nauk SSSR, 1981, vol. 260, no. 4, p. 901.
Azatyan, V.V., Aivazyan, R.G., Kalkanov, V.A., Merzhanov, A.G., and Shavard, A.A., Khim. Fiz., 1983, vol. 2, no. 8, p. 1056.
Arutyunyan, S.A. and Sarkisyan, E.N., Arm. Khim. Zh., 1982, vol. 35, no. 1, p. 3.
Rubtsov, N.M., Azatyan, V.V., Tswetkov, G.I., and Temchin, S.M., Mendeleev Commun., 1997, no. 1, p. 187.
Koda, S. and Fujiwara, O., Combust. Flame, 1988, vol. 73, p. 187.
Suga, S. and Koda, S., Jpn. J. Appl. Phys., 1988, vol. 27, p. 1966.
Azatyan, V.V., Vartanyan, A.A., Kalkanov, V.A., and Temchin, S.M., Kinet. Katal., 1991, vol. 32, no. 2, p. 511.
Rubtsov, N.M., Tsvetkov, G.I., and Chernysh, V.I., Kinet. Katal., 1997, vol. 38, no. 4, p. 498.
Vartanyan, A.A., Cand. Sci. (Chem.) Dissertation, Chernogolovka: Inst. of Chemical Physics, 1991.
Glinski, R.J., Gole, J.H., and Dixon, D.A., J. Am. Chem. Soc., 1985, vol. 107, p. 5891.
Inoue, G. and Suzuki, M., Chem. Phys. Lett., 1985, vol. 122, no. 4, p. 361.
Hager, G., Wilson, L.E., and Hadley, S.F., Chem. Phys. Lett., 1974, vol. 27, p. 439.
Van de Weijer, P. and Zwerver, B.H., Chem. Phys. Lett., 1989, vol. 163, no. 1, p. 48.
Brus, L.E. and Comac, J., J. Chem. Phys., 1981, vol. 54, p. 2771.
Chung, S.L., Tsai, M.S., and Lin, H.D., Combust. Flame, 1991, vol. 85, p. 134.
Tokuhashi, K., Horuguchi, S., Urano, Y., Iwasaka, M., Ohtahi, H., and Kondo, S., Combust. Flame, 1990, vol. 89, p. 40.
Hartman, J.R., Famil-Ghirina, J., Ring, M.A., and O'Neal, H.E., Combust. Flame, 1987, vol. 68, p. 43.
Ho, P. and Breiland, W.F., J. Appl. Phys., 1988, vol. 63, p. 5184.
Deutsch, T.F., J. Chem. Phys., 1979, vol. 70, p. 1187.
Bedja, J. and Kamat, P.V., J. Phys. Chem., 1995, vol. 99, p. 9182.
Baraban, A.P., Bulavinov, V.V., and Konorov, P.P., Elektronika sloev SiO 2 na kremnii (Electronics of SiO2 Layers on Silicon), Leningrad: Leningrad. Gos. Univ., 1988.
Streletskii, A.N., Panovich, A.B., Gachkovskii, V.F., Aristov, Yu.I., Rufov, Yu.N., and Butyagin, P.Yu., Khim. Fiz., 1982, vol. 1, no. 7, p. 938.
El-Shall, M.S., Turkki, T., Graiver, D., Pernisz, U.C., and Baraton, M.I., J. Phys. Chem., 1995, vol. 99, no. 5, p. 1785.
Rufov, Yu.N., Doctoral (Chem.) Dissertation, Moscow: Inst. of Chemical Physics, 1985.
Rubtsov, N.M., Tsvetkov, G.I., and Chernysh, V.I., Kinet. Katal., 1998, vol. 39, no. 3, p. 330.
Azatyan, V.V., Lukashev, A.S., Nagornyi, S.S., Rubtsov, N.M., and Temchin, S.M., Kinet. Katal., 1993, vol. 34, no. 3, p. 404.
Kharlamov, V.F., Rekombinatsiya atomov na poverkhnosti tverdykh tel i soputstvuyushchie effekty (Recombination of Atoms on Solid Surfaces and Accompanying Effects), Tomsk: Tomsk State Univ., 1994.
Karpov, V.P., Rubtsov, N.M., Ryshkov, O.T., et al., Proc. Zel'dovich Memorial Conf., 1994, vol. 2, p. 33.
Chernysh, V.I., Rubtsov, N.M., and Ryzhkov, O.T., Kinet. Katal., 1995, vol. 36, no. 5, p. 645.
Tolstikov, G.A., Sharipov, G.L., Voloshin, A.I., and Kazakov, V.P., Dokl. Akad. Nauk SSSR, 1984, vol. 274, no. 3, p. 658.
Dubois, I., Can. J. Phys., 1968, vol. 46, p. 2485.
Karpov, V.P., Rubtsov, N.M., Tsvetkov, G.I., and Chernysh, V.I., Khim. Fiz., 2000, vol. 19, no. 8, p. 74.
Zhao, X., Schoenfeld, O., Komuro, S., Aoyagi, Y., and Sugano, T., Phys. Rev. B: Condens. Matter, 1994, vol. 50, no. 24, p. 18654.
Conner, C.P. and Stewart, E.W., J. Am. Chem. Soc., 1977, vol. 13, p. 2544.
Baraban, A.P., Konorov, P.P., Malyavka, L.V., and Troshikhin, A.G., Fiz. Tverd. Tela, 2000, vol. 70, no. 8, p. 87.
Ratnov, A.G., Rubtsov, N.M., Temchin, S.M., and Dement'ev, A.P., Mikroelektronika, 1996, vol. 25, no. 2, p. 32.
Filippov, V.V., Pershukevich, P.P., Kuznetsova, V.V., Khomenko, V.S., and Dolgii, L.N., Zh. Prikl. Spektrosk., 2000, vol. 67, no. 5, p. 619.
Tsybeskov, L., Vandushev, Yu.V., and Fauchet, P.M., Phys. Rev. B: Condens. Matter, 1994, vol. 49, p. 7821.
Azatyan, V.V., Aivazyan, R.G., Dzhabiev, I.T., and Dzhabiev, T.S., Kinet. Katal., 1997, vol. 38, no. 1, p. 97.
Grankin, V.P. and Shalimov, V.Yu., Zh. Prikl. Spektrosk., 1999, vol. 66, no. 6, p. 809.
Anderson, P.W., Phys. Rev., 1958, vol. 109, p. 1492.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Chernysh, V.I., Rubtsov, N.M. & Tsvetkov, G.I. Flame Emission Spectra in the Region 400–600 nm during Low-Pressure Silane and Dichlorosilane Oxidation. Kinetics and Catalysis 43, 445–452 (2002). https://doi.org/10.1023/A:1019822614392
Issue Date:
DOI: https://doi.org/10.1023/A:1019822614392