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Parametric Instabilities of Two Kind of Millimeter Waves and Multiplication of Frequency in GaAs Semiconductors

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Abstract

This paper deals, at first, with the non-linear parametric effects on both space charge and electromagnetic waves in GaAs semiconductors. If an external electric field is applied, at the critical field value, the mobility changes its sign and becomes negative, as a result, non-linear instabilities of the interactions are obtained. At the optimal value of electric field, E opt, all non-linear processes are very effectives. The second point is the multiplication of the wave frequency, which is also effective thanks to the non-linearity. This process is used for carring waves into millimeter range instead of generation process, which in this range is non-effective. The Multiplication effect is based on the using space charge waves.

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Authors and Affiliations

  1. Center for Research on Engineering and Applied Sciences, Autonomous University of Morelos State, Av. Un Universidad No. 1001, Z. P, 62210, Cuernavaca Morelos, Mexico

    J. Escobedo-Alatorre, M. Tecpoyotl-Torres, S. V. Koshevaya, G. N. Burlak & A. Zamudio-Lara

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  1. J. Escobedo-Alatorre
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  2. M. Tecpoyotl-Torres
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  3. S. V. Koshevaya
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  4. G. N. Burlak
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  5. A. Zamudio-Lara
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Escobedo-Alatorre, J., Tecpoyotl-Torres, M., Koshevaya, S.V. et al. Parametric Instabilities of Two Kind of Millimeter Waves and Multiplication of Frequency in GaAs Semiconductors. International Journal of Infrared and Millimeter Waves 22, 121–132 (2001). https://doi.org/10.1023/A:1010769805729

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  • DOI: https://doi.org/10.1023/A:1010769805729

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