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Journal of Materials Science

, Volume 34, Issue 19, pp 4711–4717 | Cite as

Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

  • W. B. Choi
  • B. K. Ju
  • Y. H. Lee
  • M. H. Oh
  • N. Y. Lee
  • M. Y. Sung
Article

Abstract

A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to- silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190 °C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.

Keywords

Electron Beam Applied Voltage Silicon Wafer Glass Plate In2O3 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1999

Authors and Affiliations

  • W. B. Choi
    • 1
  • B. K. Ju
    • 1
  • Y. H. Lee
    • 1
  • M. H. Oh
    • 1
  • N. Y. Lee
    • 2
  • M. Y. Sung
    • 3
  1. 1.Electronic Materials and Devices Research CenterKorea Institute of Science and TechnologyCheongryang, SeoulKorea
  2. 2.Orion Electric Co.Information Display Research InstituteSuwonKorea
  3. 3.Department of Electrical EngineeringKorea UniversitySungbuk-Ku, SeoulKorea

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