Journal of Sol-Gel Science and Technology

, Volume 29, Issue 1, pp 5–10 | Cite as

Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide

  • M.S.M. Saifullah
  • Dae-Joon Kang
  • K.R.V. Subramanian
  • M.E. Welland
  • K. Yamazaki
  • K. Kurihara

Abstract

Electron beam-sensitive spin-coatable Al2O3 resists were prepared by chemically modifying aluminium tri-sec-butoxide with various β-ketoesters (R-acetoacetates, R = methyl, ethyl, isopropyl, isobutyl, isoamyl, heptyl, benzyl and 2-[methacryloyloxy] ethyl) in isopropyl alcohol. The reaction product was a chelated complex. With increasing molecular weight of R, there was an increase in electron beam sensitivity of spin-coatable Al2O3 resists. This appears to be due to decreased stability of the chelated complex formed by higher molecular weight R-acetoacetates. Fourier transform infrared (FTIR) spectroscopy studies indicate that exposure to an electron beam results in the breakdown of chelate rings, making the exposed area insoluble during development. Electron beam nanolithography produced 8 nm wide lines. These are the smallest oxide lines written using a sol-gel-based resist.

electron beam nanolithography inorganic resists aluminium oxide chelating agents metal alkoxides 

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Copyright information

© Kluwer Academic Publishers 2004

Authors and Affiliations

  • M.S.M. Saifullah
    • 1
  • Dae-Joon Kang
    • 1
  • K.R.V. Subramanian
    • 1
  • M.E. Welland
    • 1
  • K. Yamazaki
    • 2
  • K. Kurihara
    • 3
  1. 1.The Nanoscience Centre, Interdisciplinary Research Collaboration in NanotechnologyUniversity of CambridgeCambridgeUK
  2. 2.NTT Basic Research LaboratoriesKanagawa PrefJapan
  3. 3.NTT-AT Nanofabrication CorporationKanagawa PrefJapan

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