Journal of Materials Science

, Volume 39, Issue 19, pp 5925–5937 | Cite as

Processing, properties and arc jet oxidation of hafnium diboride/silicon carbide ultra high temperature ceramics

  • M. Gasch
  • D. Ellerby
  • E. Irby
  • S. Beckman
  • M. Gusman
  • S. Johnson


The processing and properties of HfB2-20 vol%SiC ultra high temperature ceramics were examined. Dense billets were fabricated by hot-pressing raw powders in a graphite element furnace for 1 h at 2200°C. Specimens were then tested for hardness, mechanical strength, thermal properties and oxidation resistance in a simulated re-entry environment. Thermal conductivity of the current materials was found to be less than previous work had determined while the strength was greater. Oxidation testing of two flat-face models was conducted, at two conditions, for two 10-min durations each. It was concluded that passive oxidation of SiC plays a role in determining the steady-state surface temperatures below 1700°C. Above 1700°C, temperatures are controlled by the properties of a thick HfO2 layer and active oxidation of the SiC phase.


Hafnium HfO2 Oxidation Testing Passive Oxidation Current Material 
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Copyright information

© Kluwer Academic Publishers 2004

Authors and Affiliations

  • M. Gasch
    • 1
  • D. Ellerby
    • 2
  • E. Irby
    • 2
  • S. Beckman
    • 2
  • M. Gusman
    • 1
  • S. Johnson
    • 2
  1. 1.ELORET CorporationSunnyvaleUSA
  2. 2.NASAAmes Research Center, MS 234-1Moffett FieldUSA

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