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Journal of Materials Science

, Volume 39, Issue 19, pp 5925–5937 | Cite as

Processing, properties and arc jet oxidation of hafnium diboride/silicon carbide ultra high temperature ceramics

  • M. Gasch
  • D. Ellerby
  • E. Irby
  • S. Beckman
  • M. Gusman
  • S. Johnson
Article

Abstract

The processing and properties of HfB2-20 vol%SiC ultra high temperature ceramics were examined. Dense billets were fabricated by hot-pressing raw powders in a graphite element furnace for 1 h at 2200°C. Specimens were then tested for hardness, mechanical strength, thermal properties and oxidation resistance in a simulated re-entry environment. Thermal conductivity of the current materials was found to be less than previous work had determined while the strength was greater. Oxidation testing of two flat-face models was conducted, at two conditions, for two 10-min durations each. It was concluded that passive oxidation of SiC plays a role in determining the steady-state surface temperatures below 1700°C. Above 1700°C, temperatures are controlled by the properties of a thick HfO2 layer and active oxidation of the SiC phase.

Keywords

Hafnium HfO2 Oxidation Testing Passive Oxidation Current Material 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 2004

Authors and Affiliations

  • M. Gasch
    • 1
  • D. Ellerby
    • 2
  • E. Irby
    • 2
  • S. Beckman
    • 2
  • M. Gusman
    • 1
  • S. Johnson
    • 2
  1. 1.ELORET CorporationSunnyvaleUSA
  2. 2.NASAAmes Research Center, MS 234-1Moffett FieldUSA

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