Journal of Computational Electronics

, Volume 2, Issue 2–4, pp 487–490 | Cite as

Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings

  • Yiming Li
  • Hsiao-Mei Lu


In this paper, we study the impact of the sizes and the shapes of nanoscale semiconductor quantum rings on the electron and hole energy states. A three-dimensional effective one band Schrödinger equation is solved numerically for semiconductor quantum rings with disk, cut-bottom-elliptical, and conical shapes. For small InAs/GaAs quantum rings we have found a sufficient difference in the ground state and excited state (l = −1) electron energies for rings with the same volume but different shapes. Volume dependence of the electron and hole energies can vary over a wide range and depends significantly on the ring shapes. It is found that a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields.

nanoscale quantum ring InAs/GaAs energy spectra geometry and magnetic field effects computer simulation 


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Copyright information

© Kluwer Academic Publishers 2003

Authors and Affiliations

  • Yiming Li
    • 1
    • 2
  • Hsiao-Mei Lu
    • 3
  1. 1.Department of Nano Device TechnologyNational Nano Device LaboratoriesHsinchuTaiwan
  2. 2.Microelectronics and Information Systems Research CenterNational Chiao Tung UniversityHsinchuTaiwan
  3. 3.Department of BioengineeringUniversity of Illinois at ChicagoChicagoUSA

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