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Journal of Computational Electronics

, Volume 2, Issue 2–4, pp 219–223 | Cite as

Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method

  • A. Gehring
  • H. Kosina
  • S. Selberherr
Article

Abstract

We present simulations of tunneling current through layers of high-κ dielectrics using the Tsu-Esaki model and the quantum transmitting boundary method (QTBM) to estimate the transmission coefficient. In contrast to transfer-matrix based methods, which suffer from numerical instabilities due to rounding errors, the QTBM is numerically stable even for large stacks and is suitable for implementation in device simulators. The method is used to investigate the tradeoff between conduction band offset and permittivity in alternative high-κ materials.

device simulation tunneling high-k dielectrics transfer-matrix transmitting-boundary 

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Copyright information

© Kluwer Academic Publishers 2003

Authors and Affiliations

  • A. Gehring
    • 1
  • H. Kosina
    • 1
  • S. Selberherr
    • 1
  1. 1.Institut für MikroelektronikTU WienViennaAustria

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