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Instruments and Experimental Techniques

, Volume 47, Issue 6, pp 799–808 | Cite as

Investigation of the Internal Amplification Effect on Planar (p+nn+) Structures Made of High-Resistivity Silicon

  • S. A. Golubkov
  • Yu. B. Gurov
  • K. N. Gusev
  • N. N. Egorov
  • N. I. Zamyatin
  • S. L. Katulina
  • Yu. F. Kozlov
  • K. A. Kon'kov
  • V. G. Sandukovsky
  • A. I. Sidorov
  • A. S. Starostin
Article

Abstract

The first results of studies of special strip and pixel silicon detectors are presented. The detector structures allow the creation of high electrical fields (5 × 105 V/cm) near pn junctions that are powerful enough to initiate an avalanche multiplication of charge carriers. The possibility of internal amplification in a semiconductor detector similar to the proportional amplification in gas counters is shown. The spectrum of α particles from 238Pu (Eα = 5.5 MeV) demonstrates an “amplified” peak at an energy of 70.2 MeV and an energy resolution FWHM = 10.2 MeV.

Keywords

Silicon Physical Chemistry Charge Carrier Energy Resolution High Electrical Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK “Nauka/Interperiodica” 2004

Authors and Affiliations

  • S. A. Golubkov
    • 1
  • Yu. B. Gurov
    • 2
  • K. N. Gusev
    • 3
  • N. N. Egorov
    • 1
  • N. I. Zamyatin
    • 3
  • S. L. Katulina
    • 3
  • Yu. F. Kozlov
    • 1
  • K. A. Kon'kov
    • 1
  • V. G. Sandukovsky
    • 3
  • A. I. Sidorov
    • 1
  • A. S. Starostin
    • 4
  1. 1.Research Institute of Material Science and TechnologyZelenogradRussia
  2. 2.Moscow Engineering Physics InstituteMoscowRussia
  3. 3.Joint Institute for Nuclear ResearchMoscow oblastRussia
  4. 4.Institute of Theoretical and Experimental PhysicsMoscowRussia

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