In(Ga)As quantum dots on Ge substrate

  • L. Knuuttila
  • K. Kainu
  • M. Sopanen
  • H. Lipsanen


The effects of growth temperature and deposition thickness on the formation, size, density, and uniformity of InAs and In0.5Ga0.5As islands grown by metalorganic vapor phase epitaxy on a germanium substrate are investigated. Atomic force microscopy images show InAs islands when 0.8–2.0 monolayers are deposited. At the nominal deposition thickness of 2.0 monolayers an island density of 2.5×1010 cm−2 is achieved. InAs islands covered with a GaAs layer show low-temperature luminescence at around 1.15 eV. The In0.5Ga0.5As islands grown at 550 °C show a maximum density of 3.5×1010 cm−2 at a nominal three monolayers deposition thickness.


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Copyright information

© Kluwer Academic Publishers 2003

Authors and Affiliations

  • L. Knuuttila
    • 1
  • K. Kainu
    • 1
  • M. Sopanen
    • 1
  • H. Lipsanen
    • 1
  1. 1.Optoelectronics LaboratoryHelsinki University of TechnologyFinland

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