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Russian Microelectronics

, Volume 32, Issue 3, pp 151–157 | Cite as

Mechanism of the Ultradeep Anisotropic Chemical Etching of Si(100) in the Microfabrication of Piezoresistive Pressure Sensors

  • L. V. Sokolov
  • S. V. Arkhipov
  • V. M. Shkol'nikov
Article

Abstract

An experimental examination of a thin diaphragm for integrated piezoresistive pressure sensors is reported. The diaphragm is fabricated by ultradeep anisotropic chemical etching of monocrystalline silicon. The mechanism of the process is investigated by exploring the morphology of the etched surface. Process-induced pyramidal hillocks, pits, and trenches are measured.

Keywords

Silicon Trench Pressure Sensor Chemical Etching Monocrystalline Silicon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK Nauka/Interperiodica 2003

Authors and Affiliations

  • L. V. Sokolov
    • 1
  • S. V. Arkhipov
    • 1
  • V. M. Shkol'nikov
    • 1
  1. 1.Moscow State Institute of AviationMoscowRussia

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