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Journal of Computational Electronics

, Volume 1, Issue 3, pp 371–374 | Cite as

An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs

  • H. Kosina
  • M. Gritsch
  • T. Grasser
  • T. Linton
  • S. Yu
  • M.D. Giles
  • S. Selberherr
Article

Abstract

When applied to partially depleted SOI MOSFETs, the energy transport model predicts anomalous output characteristics. The effect that the drain current reaches a maximum and then decreases is peculiar to the energy transport model. It is not present in drift-diffusion simulations and its occurrence in measurements is questionable. The effect is due to an overestimation of the diffusion of channel hot carriers into the floating body. A modified energy transport model is proposed which describes hot carrier diffusion more realisticly and allows for proper simulation of SOI MOSFETs.

energy transport moment equations Boltzmann equation device simulation silicon on insulator 

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References

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Copyright information

© Kluwer Academic Publishers 2002

Authors and Affiliations

  • H. Kosina
    • 1
  • M. Gritsch
    • 1
  • T. Grasser
    • 1
  • T. Linton
    • 2
  • S. Yu
    • 2
  • M.D. Giles
    • 2
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria
  2. 2.Intel CorporationSanta ClaraUSA

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