An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs
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When applied to partially depleted SOI MOSFETs, the energy transport model predicts anomalous output characteristics. The effect that the drain current reaches a maximum and then decreases is peculiar to the energy transport model. It is not present in drift-diffusion simulations and its occurrence in measurements is questionable. The effect is due to an overestimation of the diffusion of channel hot carriers into the floating body. A modified energy transport model is proposed which describes hot carrier diffusion more realisticly and allows for proper simulation of SOI MOSFETs.
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- DESSIS-ISE Users Manual, Release 6.Google Scholar
- Egley J., Polsky B., Min B., Lyumkis E., Penzin O., and Foisy M. 2000. SOI related simulation challenges with moment based BTE solvers. In: Proc. Simulation of Semiconductor Processes and Devices, Seattle, Washington, USA. IEEE, pp. 241–244.Google Scholar
- Gritsch M., Kosina H., Grasser T., and Selberherr S. 2001a. Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs. Solid-State Electron. 45(4): 621–627.Google Scholar
- Gritsch M., Kosina H., Grasser T., and Selberherr S. 2001b. A simulation study of paritally depleted SOI MOSFETs. In: Proc. Siliconon-Insulator Technology and Devices X, Washington DC, USA. The Electrochemical Society, Vol. 2001-3, pp. 181–186.Google Scholar
- Simlinger T., Brech H., Grave T., and Selberherr S. 1997. Simulation of submicron double-heterojunction high electron mobility transistor with MINIMOS-NT. IEEE Trans. Electron Devices 44(5): 700–707.Google Scholar