Optical and Quantum Electronics

, Volume 34, Issue 9, pp 883–891

Structural and optical properties of ZnO film by plasma-assisted MOCVD

  • X. Wang
  • S. Yang
  • J. Wang
  • M. Li
  • X. Jiang
  • G. Du
  • X. Liu
  • R.P.H. Chang
Article

Abstract

High quality ZnO film was deposited by plasma-assisted metal-organic chemical vapor deposition (MOCVD). We observed a dominant peak at 34.6° due to (0 0 2) ZnO, which indicated that the growth of ZnO film was strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° indicating relatively small mosaicity. Photoluminescence (PL) measurement was performed at both room temperature and low temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. From PL spectrum at 10 K, we observed A-exciton emission at 3.377 eV and D°X bound exciton transition at 3.370 eV. The donor–acceptor transition and LO phonon replicas were observed at 3.333 and 3.241 eV respectively. Raman scattering was performed in back scattering at room temperature. The E2, A1(LO) and A1(TO) mode was seen at 437.6, 575.8 and 380 cm−1 respectively. In comparison with Raman spectrum of ZnO powder, we found that ZnO film was nearly free of strain, which indicated high crystal quality.

photoluminescence raman scattering ultraviolet emission ZnO 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Bagnall, D.M., Y.F. Chen, Z. Zhu, et al. Appl. Phys. Lett. 70 2230, 1997.Google Scholar
  2. Bagnall, D.M., Y.F. Chen, Z. Zhu, et al. Appl. Phys. Lett. 73 1038, 1998.Google Scholar
  3. Bethke, S., K. Pan and B.W. Wesseis. Appl. Phys. Lett. 52 138, 1988.Google Scholar
  4. Bylander, E.G. J. Appl. Phys. 49 1188, 1978.Google Scholar
  5. Calleja, J.M. and M. Cardona. Phys. Rev. B 16 3753, 1977.Google Scholar
  6. Cao, H., Y.G. Zhao, H.C. Ong, et al. Appl. Phys. Lett. 73 3656, 1998.Google Scholar
  7. Chen, Y.F., D.M. Bagnall, Hang-jun Koh, et al. J. Appl. Phys. 84 3912, 1998.Google Scholar
  8. Gorla, C.R., N.W. Emanetoglu, S. Liang, et al. J. Appl. Phys. 85 2595, 1999.Google Scholar
  9. Kumano, H., A.A. Ashrafi, A. Heta, et al. J. Cryst. Growth 214–215 280, 2000.Google Scholar
  10. Reynolds, D.C., D.C. Look and B. Jogni. Solid State Commun. 101 643, 1997.Google Scholar
  11. Ryu, Y.R., S. Zhu, J.D. Budai, et al. J. Appl. Phys. 88 201, 2000.Google Scholar
  12. Sang II Park, R.S. Cho, S.J. Doh, et al. Appl. Phys. Lett. 77 349, 2000.Google Scholar
  13. Tang, Z.K., G.K.L. Wong, P. Yu, et al. Appl. Phys. Lett. 72 3270, 1998.Google Scholar
  14. Vanheusden, K., W.L. Warren and C.H. Seager. J. Appl. Phys. 79 7983, 1996.Google Scholar
  15. Wu, H.Z., K.M. He, D.J. Qiu and D.M. Huang, J. Cryst. Growth 217 131, 2000.Google Scholar

Copyright information

© Kluwer Academic Publishers 2002

Authors and Affiliations

  • X. Wang
    • 1
  • S. Yang
    • 1
  • J. Wang
    • 1
  • M. Li
    • 1
  • X. Jiang
    • 1
  • G. Du
    • 1
  • X. Liu
    • 2
  • R.P.H. Chang
    • 2
  1. 1.Department of Electronic Engineering, State Key Lab on Integrated OptoelectronicsJilin UniversityChangchunPeople's Republic of China
  2. 2.Materials Research CenterNorthwestern UniversityUSA

Personalised recommendations