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Journal of Materials Science

, Volume 32, Issue 18, pp 4999–5003 | Cite as

Fabrication of high aspect ratio silicon micro-tips for field emission devices

  • In Jae Chung
  • D. B Murfett
  • A Hariz
  • M. R Haskard
Article

Abstract

The evolution of higher order {221} and {331} crystal planes during corner undercutting in the anisotropic etching of (100) silicon is discussed, and the occurrence of highly vertical (72.5°) {311} planes unique to KOH etches are demonstrated. Using a combined etching technique, very high aspect ratio micro-tips are formed and their distinct advantages for vacuum microelectronics and field-emission devices (FED) are described.

Keywords

High Aspect Ratio Etch Rate Undercut Pyrazine Pyrocatechol 

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Copyright information

© Chapman and Hall 1997

Authors and Affiliations

  • In Jae Chung
    • 1
  • D. B Murfett
  • A Hariz
  • M. R Haskard
  1. 1.Microelectronics Centre, Department of Electronic EngineeringUniversity of South AustraliaThe Levels South AustraliaAustralia

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