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Journal of Materials Science

, Volume 32, Issue 6, pp 1431–1436 | Cite as

High-resolution transmission electron microscopy investigation of a stacking fault in β-Si3N4

  • X. G NING
  • D. S WILKINSON
  • G. C WEATHERLY
  • H. Q YE
Article

Abstract

High-resolution transmission electron microscopy images of stacking faults on (0 0 1) and (1 0 1) planes in a β-Si3N4 whisker were obtained and compared to image simulations. This procedure showed that the atomic structure of the four atomic planes around the (0 0 1) stacking fault plane in the β-phase is very similar to that of the unit cell of α-Si3N4 crystal. The stacking fault was observed to climb under electron irradiation in the microscope.

Keywords

Silicon Nitride Fault Plane Atomic Structure Translation Vector Simulated Image 

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Copyright information

© Chapman and Hall 1997

Authors and Affiliations

  • X. G NING
    • 1
  • D. S WILKINSON
  • G. C WEATHERLY
  • H. Q YE
    • 2
  1. 1.Department of Materials Science and EngineeringMcMaster UniversityHamiltonCanada
  2. 2.Laboratory of Atomic Imaging of Solids, Institute of Metal ResearchChinese Academy of SciencesShenyangPeople’s Republic of China

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