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Journal of Materials Science

, Volume 32, Issue 5, pp 1187–1193 | Cite as

Oxidation of silicon nitride under standard air or microwave-excited air at high temperature and low pressure

  • M BALAT
  • M CZERNIAK
  • R BERJOAN
Article

Abstract

During the atmospheric re-entry of space shuttles, the thermal constraints due to the hypersonic velocity can lead to very extensive damage on materials of the protective heat shield (oxidation, thermal shock, etc.). In order to test the oxidation resistance of such materials, we have realized an experimental set-up called MESOX which associates a concentrated radiation solar furnace and a microwave generator. The maximal heat flux is 4.5 MW m-2, and the temperature ranges up to 2500 K. The total pressure is in the range 102–104 Pa. For silicon-based ceramics, it is necessary to have a good knowledge of the conditions for the existence of a protective silica layer. The determination of the transition between passive and active oxidation is done, in the case of sintered silicon nitride, under standard and microwave-excited air.

Keywords

Silicon Nitride Active Oxidation Silica Layer Passive Oxidation Valence Band Spectrum 

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Copyright information

© Chapman and Hall 1997

Authors and Affiliations

  • M BALAT
    • 1
  • M CZERNIAK
    • 1
  • R BERJOAN
    • 1
  1. 1.Institut de science et de genie des Materiaux et Procedes (IMP-CNRS), BP5Font-Romeu-Odeillo CedexFrance

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