Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures
- 44 Downloads
Cyclic and static loading tests were performed on reaction-bonded silicon nitride from 1000–1400 °C in air. This porous, fine-grained material contained no glassy grain-boundary phase and exhibited no slow crack growth at room temperature. Under cyclic loading, the crack-growth behaviour at 1000 °C was similar to room-temperature results; however, at 1200 and 1400 °C crack-growth rates increased significantly. Under static loading, significant crack growth was detected at 1000 °C and increased with temperature. Most of the crack growth under cyclic loading was attributed to slow crack-growth mechanisms, but evidence of cyclic crack-growth mechanisms were also observed. Oxidation played a major role in crack-growth velocity at high temperature.
KeywordsCyclic Loading Silicon Nitride Slow Crack Growth Cyclic Fatigue Primary Crack
Unable to display preview. Download preview PDF.
- 10.A. G. EVANS and R. W. DAVIDGE, ibid. 5 (1970) 315.Google Scholar
- 11.M. E. WASHBURN and H. R. BAUMGARTNER, in “Ceramics for High Performance Applications”, edited by J. J. Burke, A. E. Gorum and R. N. Katz (Brook Hill, Chestnut Hill, MA, 1975) p. 479.Google Scholar
- 13.L. CHUCK, University of Dayton, personal communication (1990).Google Scholar
- 16.C. JANSSEN, in “Proceedings Tenth International Congress on Glass” (Ceramic Society of Japan, Tokyo, 1974) p. 10.23.Google Scholar
- 21.K. HATANAKA, H. SHIOTA and T. ANDO, JSME Int. J. 34 (1991) 351.Google Scholar