Inorganic Materials

, Volume 37, Issue 7, pp 662–668

Thermoelectric Properties of nGeTe · mSb2Te3Layered Compounds

  • P. P. Konstantinov
  • L. E. Shelimova
  • E. S. Avilov
  • M. A. Kretova
  • V. S. Zemskov
Article

DOI: 10.1023/A:1017613804472

Cite this article as:
Konstantinov, P.P., Shelimova, L.E., Avilov, E.S. et al. Inorganic Materials (2001) 37: 662. doi:10.1023/A:1017613804472

Abstract

The Hall coefficient, electrical conductivity, and thermoelectric power of Ge3Sb2Te6, Ge2Sb2Te5, GeSb2Te4 , and GeSb4Te7were measured over a wide temperature range (RHand σ from 77 to 800 K and Sfrom 90 to 450 K). The carrier concentration was varied via compositional changes within the homogeneity regions of the compounds. All of the materials studied were found to be p-type. Some of the alloys have a low lattice thermal conductivity and are, therefore, candidate p-type thermoelectric materials. The temperature-dependent hole mobility data suggest that both acoustic phonons and point defects contribute to the scattering of charge carriers at low temperatures.

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Copyright information

© MAIK “Nauka/Interperiodica” 2001

Authors and Affiliations

  • P. P. Konstantinov
    • 1
  • L. E. Shelimova
    • 2
  • E. S. Avilov
    • 2
  • M. A. Kretova
    • 2
  • V. S. Zemskov
    • 2
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Baikov Institute of Metallurgy and Materials ResearchRussian Academy of SciencesRussia

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