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Optical and Quantum Electronics

, Volume 34, Issue 8, pp 747–757 | Cite as

Scattering-parameter measurements of laser diodes

  • N.H. Zhu
  • Y. Liu
  • E.Y.B. Pun
  • P.S. Chung
Article

Abstract

An accurate and simple technique for measuring the input reflection coefficient and the frequency response of semiconductor laser diode chips is proposed and demonstrated. All the packaging parasitics could be obtained accurately using a calibrated probe, and the impedance of the intrinsic diode chip is deduced from the directly measured reflection coefficient. The directly measured impedance of a laser diode is affected strongly by the short bond wire. In the frequency response (S21) measurements of semiconductor laser diode chips, the test fixture consists of a microwave probe, a submount, and a bond wire. The S-parameters of the probe could be determined using the short-open-match (SOM) method. Both the attenuation and the reflection of the test fixture have a strong influence on the directly measured frequency response, and in our proposed technique, the effect of test fixture is completely removed.

microwave network analyzer scattering-parameter measurement semiconductor laser diode test fixture calibration 

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Copyright information

© Kluwer Academic Publishers 2002

Authors and Affiliations

  • N.H. Zhu
    • 1
  • Y. Liu
    • 1
  • E.Y.B. Pun
    • 2
  • P.S. Chung
    • 2
  1. 1.State Key Laboratory on Integrated Optoelectronics, National Research Center for Optoelectronic Technology, Institute of SemiconductorsChinese Academy of SciencesBeijingPR China
  2. 2.Department of Electronic EngineeringCity University of Hong KongKowloonHong Kong

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