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Russian Microelectronics

, Volume 31, Issue 4, pp 248–253 | Cite as

Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors

  • Yu. P. Snitovskii
Article

Abstract

An experimental evaluation is presented concerning the common-emitter parameters and output current–voltage characteristics of chip n–p–n transistors that are designed for pulsed conditions and have gain–bandwidth products, fT, higher than 300 MHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. It is shown that the new approach enables one to improve transistor performance. Some process techniques for the transistors are described.

Keywords

Microwave Experimental Evaluation Process Technique Bipolar Transistor Pulse Condition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK "Nauka/Interperiodica" 2002

Authors and Affiliations

  • Yu. P. Snitovskii
    • 1
  1. 1.Belarussian State University of Information Science and ElectronicsBelarus

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