Russian Microelectronics

, Volume 31, Issue 4, pp 248–253 | Cite as

Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors

  • Yu. P. Snitovskii


An experimental evaluation is presented concerning the common-emitter parameters and output current–voltage characteristics of chip n–p–n transistors that are designed for pulsed conditions and have gain–bandwidth products, fT, higher than 300 MHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. It is shown that the new approach enables one to improve transistor performance. Some process techniques for the transistors are described.


Microwave Experimental Evaluation Process Technique Bipolar Transistor Pulse Condition 
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Copyright information

© MAIK "Nauka/Interperiodica" 2002

Authors and Affiliations

  • Yu. P. Snitovskii
    • 1
  1. 1.Belarussian State University of Information Science and ElectronicsBelarus

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