Journal of Materials Science

, Volume 37, Issue 11, pp 2259–2261 | Cite as

Quantum confinement effect in SiO2 films containing Ge microcrystallites

  • N. Y. Tang
  • X. M. Wu
  • L. J. Zhuge
  • C. N. Ye
  • W. G. Yao
  • J. Chen
  • Y. M. Dong
  • Y. H. Yu
Article

Abstract

SiO2 thin films embedded with Ge microcrystallites (Ge-SiO2 films) were prepared by RF-magnetron co-sputtering method from a composite target of Ge and SiO2. The average size of Ge crystallites can be modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-SiO2 films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

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Copyright information

© Kluwer Academic Publishers 2002

Authors and Affiliations

  • N. Y. Tang
    • 1
  • X. M. Wu
    • 1
  • L. J. Zhuge
    • 1
  • C. N. Ye
    • 1
  • W. G. Yao
    • 1
  • J. Chen
    • 2
  • Y. M. Dong
    • 2
  • Y. H. Yu
    • 2
  1. 1.Department of PhysicsSuzhou UniversitySuzhouPeople's Republic of China
  2. 2.Ion Beam Lab., Shanghai Institute of MetallurgyAcademia SinicaShanghaiPeople's Republic of China

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