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Russian Microelectronics

, Volume 31, Issue 2, pp 79–83 | Cite as

Thermal Oxidation of InP Promoted by the Formation of N2O

  • I. Ya. Mittova
  • S. S. Lavrushina
  • E. V. Popova
  • A. A. Muratov
  • V. M. Kashkarov
Article
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Abstract

The thermal-oxidation growth of dielectric films on InP substrates with NH4NO3 introduced into the oxidizing atmosphere is studied experimentally. Due to the simultaneous formation of N2O from NH4NO3, this type of thermal oxidation of InP is found to run faster than the oxidation involving the external supply of humid O2 or N2O. The films thus produced demonstrate adequate dielectric performance.

Keywords

Oxidation Atmosphere NH4NO3 Thermal Oxidation Dielectric Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK “Nauka/Interperiodica” 2002

Authors and Affiliations

  • I. Ya. Mittova
    • 1
  • S. S. Lavrushina
    • 1
  • E. V. Popova
    • 1
  • A. A. Muratov
    • 1
  • V. M. Kashkarov
    • 1
  1. 1.Voronezh State UniversityVoronezhRussia

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