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Journal of Thermal Analysis and Calorimetry

, Volume 65, Issue 1, pp 257–274 | Cite as

Kinetic Studies of Bulk Ge22Se78−xBix (x=0, 4 and 8) Semiconducting Glasses

  • M. M. A. Imran
  • D. Bhandari
  • N. S. Saxena
Article

Abstract

Results of phase transformations, enthalpy released and specific heat of Ge22Se78−xBix(x=0, 4 and 8) chalcogenide glasses, using differential scanning calorimetry (DSC), under non-isothermal condition have been reported and discussed. The glass transition temperature, Tg, is found to increase with an average coordination number and heating rates. Following Gibbs—Dimarzio equation, the calculated values of Tg (i.e. 462.7, 469.7 and 484.4 K) and the experimental values (i.e. 463.1, 467.3 and 484.5 K) increase with Bi concentration. Both values of Tg, at a heating rate of 5 K min−1, are found to be in good agreement. The glass transition activation energy increases i.e. 102±2, 109±3 and 115±8 kJ mol−1 with Bi concentration. The demand for thermal stability has been ensured through the temperature difference TcTg and the enthalpy released during the crystallization process. Below Tg, specific heat has been observed to be temperature independent but highly compositional dependent. The growth kinetic has been investigated using the Kissinger, Ozawa, Matusita and modified JMA equations. Results indicate that the crystallization ability is enhanced, the activation energy of crystallization increases with increasing the Bi content and the crystal growth of these glasses occur in 3 dimensions.

activation energy crystal growth glass transition temperature specific heat thermal stability 

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Copyright information

© Kluwer Academic Publishers 2001

Authors and Affiliations

  • M. M. A. Imran
    • 1
  • D. Bhandari
    • 1
  • N. S. Saxena
    • 1
  1. 1.Condensed Matter Physics Laboratory, Department of PhysicsUniversity of RajasthanJaipurIndia

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