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Dielectric properties of thin solid films formed on silicon

  • P. C. Fannin
  • T. S. Perova
  • A. T. Giannitis
  • M. Nolan
  • A. R. Moore
  • H. S. Gamble
Article

Abstract

We report on the measurement of the frequency-dependent complex permittivity, ɛ(ω)=′ɛ(ω)-iɛ″(ω), over the frequency range, 30 MHz to 6 GHz, of silicon wafers and of thin dielectric films formed on silicon. Measurements, as a function of temperature and time treatments, were obtained by means of an HP Network Analyzer and dielectric probe and the resulting ɛ′(ω)andɛ″(ω)plots for the silicon wafers are shown to have a Debye-type [1] profile, thereby indicating that the associated polarization mechanism is of the orientational variety.

Keywords

Silicon Electronic Material Dielectric Property Network Analyzer Time Treatment 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 2001

Authors and Affiliations

  • P. C. Fannin
    • 1
  • T. S. Perova
    • 1
  • A. T. Giannitis
    • 1
  • M. Nolan
    • 1
  • A. R. Moore
    • 1
  • H. S. Gamble
    • 2
  1. 1.Department of Electronic and Electrical EngineeringUniversity of Dublin, Trinity CollegeDublin 2Ireland
  2. 2.Department of Electronic EngineeringThe Queen's University of BelfastBelfast, Northern IrelandUK

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