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Journal of Electroceramics

, Volume 4, Issue 2–3, pp 365–368 | Cite as

Dielectric Properties of Homoepitaxial SrTiO3SrTiO3SrTiO3 Thin Films Grown in the Step-Flow Mode

  • M. Lippmaa
  • N. Nakagawa
  • M. Kawasaki
  • S. Ohashi
  • H. Koinuma
Article

Abstract

We have deposited SrTiO3 thin films on Nb-doped SrTiO3 substrates by pulsed laser deposition at temperatures of up to 1400°C. Reflection high energy electron diffraction was used to monitor the film growth mode at various temperatures and it was shown that growth proceeded in the step-flow mode at above 900°C. Capacitors were formed by evaporating platinum pads on the film surface and gold pads on the substrate. Films grown in the step-flow mode showed consistently higher dielectric constants below 200 K than films grown in the layer-by-layer mode. Films with the highest dielectric constant (ε) were obtained using a stoichiometric ablation target at an oxygen pressure of 10SrTiO3−6SrTiO3 Torr.

SrTiO3 step-flow dielectric constant 

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Copyright information

© Kluwer Academic Publishers 2000

Authors and Affiliations

  • M. Lippmaa
    • 1
  • N. Nakagawa
    • 1
  • M. Kawasaki
    • 1
  • S. Ohashi
    • 2
  • H. Koinuma
    • 2
  1. 1.Department of Innovative and Engineered MaterialsTokyo Institute of TechnologyYokohamaJapan
  2. 2.Ceramics Materials and Structures LaboratoryTokyo Institute of TechnologyYokohamaJapan

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