Advertisement

Russian Microelectronics

, Volume 30, Issue 2, pp 125–136 | Cite as

Gerentology of Silicon Integrated Circuits

  • M. I. Gorlov
  • A. V. Strogonov
Article

Abstract

The lifetime of silicon ICs in relation to material and component aging is discussed. The service time of the circuits was predicted from accelerated tests. The lifetime of circuits of series 106, 134, 1804, 582, and 136 was evaluated from parameter failures with the Box–Jenkins model.

Keywords

Silicon Service Time Integrate Circuit Accelerate Test Component Aging 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

REFERENCES

  1. 1.
    Gorlov, M.I. and Strogonov, A.V., Gerentology of Integrated Circuits: Prediction of the IC Lifetime, Peterb. Zh. Elektron., 1996, no. 4, pp. 35–41.Google Scholar
  2. 2.
    Gorlov, M.I. and Strogonov, A.V., Gerentology of Integrated Circuits: Lifetime Prediction Using Accelerated Tests, Materialy nauchno-tekhnicheskogo seminaraShumovye i degradatsionnye protsessy v poluprovodnikovykh priborakh (metrologiya, diagnostika, tekhnologiya)” (Proc. Sci.-Tech. Workshop on Noise and Degradation Processes in Semiconductor Devices (Metrology, Diagnostics, and Technology), Moscow, Popov Radio Engineering Society, 1997, pp. 303–311.Google Scholar
  3. 3.
    Gorlov, M.I. and Strogonov, A.V., Gerentology of Integrated Circuits: Lifetime of Aluminum Metallization, Peterb. Zh. Electron., 1997, no. 1, pp. 27–37.Google Scholar
  4. 4.
    Gorlov, M.I. and Strogonov, A.V., Gerentology of Integrated Circuits: Lifetime of Oxide Films, Peterb. Zh. Electron., 1997, no. 2, pp. 24–36.Google Scholar
  5. 5.
    Gorlov, M.I. and Strogonov, A.V., Prediction of the IC Lifetime Using the Method of Nonstationary Time Series, Izv. Vyssh. Uchebn. Zaved., Elektron., 1997, no. 2, pp. 63–67.Google Scholar
  6. 6.
    Aleksanyan, I.T. and Krivoshapko, V.M., Simulation of Parametric Failures and the Study of IC Reliability, Elektron. Tekh., Ser. 8: Upr. Kach. Stand. Metrol. Ispyt., 1981, no. 4, pp. 52–57.Google Scholar
  7. 7.
    Gorlov, M.I. and Strogonov, A.V., Silicon Bipolar Logical IC Lifetime Predicted from Parametric Failures, Izv. Vyssh. Uchebn. Zaved., Electron., 1999, no. 3, pp. 52–57.Google Scholar
  8. 8.
    Gorlov, M.I., Strogonov, A.V., and Bashkatov, M.V., Prediction of IC Electric Performance Degradation Versus Results of Life Tests, Materialy nauchno-tekhnicheskogo seminaraShumovye i degradatsionnye protsessy v poluprovodnikovykh priborakh (metrologiya, diagnostika, tekhnologiya)” (Proc. Sci.-Tech. Workshop on Noise and Degradation Processes in Semiconductor Devices (Metrology, Diagnostics, and Technology), Moscow, 1999, pp. 350–353.Google Scholar
  9. 9.
    Gorlov, M.I., Strogonov, A.V., Martynov, V.V., and Bashkatov, M.V., The Effect of Long-Term Mechanical Action on the Drift of Series-134 IC Electric Parameters, Izv. Vyssh. Uchebn. Zaved., Elektron., 1999, no. 6, pp. 55–60.Google Scholar

Copyright information

© MAIK “Nauka/Interperiodica” 2001

Authors and Affiliations

  • M. I. Gorlov
    • 1
  • A. V. Strogonov
    • 1
  1. 1.Voronezh State Technical UniversityVoronezhRussia

Personalised recommendations